Bassett, L. C.; Alkauskas, A.; Exarhos, A. L.; Fu, K. -M. C.
Quantum defects by design Journal Article
In: Nanophotonics, vol. 8, no. 11, 2019.
@article{Bassett2019b,
title = {Quantum defects by design},
author = {L. C. Bassett and A. Alkauskas and A. L. Exarhos and K.-M. C. Fu},
url = {https://www.degruyter.com/view/journals/nanoph/8/11/article-p1867.xml},
year = {2019},
date = {2019-10-04},
journal = {Nanophotonics},
volume = {8},
number = {11},
abstract = {Part of Special Issue on Quantum Nanophotonics in Emerging Materials.
Miniaturization of electronic and opto-electronic semiconductor devices has been happening ever since the first such devices appeared. Eventually, one can envision a device that is composed of just a few atoms. As these atoms ideally should not float in free space, but should be embedded in a solid-state matrix, this naturally brings one to the concept of a point defect (an impurity atom or complex of atoms) as the ultimate electronic or opto-electronic device. At such tiny length scales the behavior of physical systems is governed by the laws of quantum mechanics. Therefore, it is no surprise that an increasing number of point defects are being considered as building blocks for various applications in the field of quantum information science; more specifically, in quantum sensing, quantum communication, and quantum computing [1], [2], [3], [4]. We refer to these desirable defects as quantum point defects (QPDs). Prominent examples include the nitrogen-vacancy (NV) center in diamond, the silicon-vacancy (SiV) center in diamond, the divacancy in silicon carbide, and rare-earth impurities in complex oxides.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Part of Special Issue on Quantum Nanophotonics in Emerging Materials.
Miniaturization of electronic and opto-electronic semiconductor devices has been happening ever since the first such devices appeared. Eventually, one can envision a device that is composed of just a few atoms. As these atoms ideally should not float in free space, but should be embedded in a solid-state matrix, this naturally brings one to the concept of a point defect (an impurity atom or complex of atoms) as the ultimate electronic or opto-electronic device. At such tiny length scales the behavior of physical systems is governed by the laws of quantum mechanics. Therefore, it is no surprise that an increasing number of point defects are being considered as building blocks for various applications in the field of quantum information science; more specifically, in quantum sensing, quantum communication, and quantum computing [1], [2], [3], [4]. We refer to these desirable defects as quantum point defects (QPDs). Prominent examples include the nitrogen-vacancy (NV) center in diamond, the silicon-vacancy (SiV) center in diamond, the divacancy in silicon carbide, and rare-earth impurities in complex oxides.
Miniaturization of electronic and opto-electronic semiconductor devices has been happening ever since the first such devices appeared. Eventually, one can envision a device that is composed of just a few atoms. As these atoms ideally should not float in free space, but should be embedded in a solid-state matrix, this naturally brings one to the concept of a point defect (an impurity atom or complex of atoms) as the ultimate electronic or opto-electronic device. At such tiny length scales the behavior of physical systems is governed by the laws of quantum mechanics. Therefore, it is no surprise that an increasing number of point defects are being considered as building blocks for various applications in the field of quantum information science; more specifically, in quantum sensing, quantum communication, and quantum computing [1], [2], [3], [4]. We refer to these desirable defects as quantum point defects (QPDs). Prominent examples include the nitrogen-vacancy (NV) center in diamond, the silicon-vacancy (SiV) center in diamond, the divacancy in silicon carbide, and rare-earth impurities in complex oxides.