Jordan Gusdorff
Ph.D. Student, Materials Science & Engineering
200 S. 33rd St
201 Moore Building
Philadelphia, PA 19104
Email: jag18@seas.upenn.edu
Phone: (215) 898-8312
Fax: (215) 573-2068
Keneipp, Rachael N; Gusdorff, Jordan A; Bhatia, Pia; Shin, Trey T; Bassett, Lee C; Drndić, Marija Nanoscale Sculpting of Hexagonal Boron Nitride with an Electron Beam Journal Article Journal of Physical Chemistry C, 128 (21), pp. 8741–8749, 2024. @article{Keneipp2024, title = {Nanoscale Sculpting of Hexagonal Boron Nitride with an Electron Beam}, author = {Rachael N. Keneipp and Jordan A. Gusdorff and Pia Bhatia and Trey T. Shin and Lee C. Bassett and Marija Drndić}, url = {https://pubs.acs.org/doi/full/10.1021/acs.jpcc.4c02038}, doi = {10.1021/acs.jpcc.4c02038}, year = {2024}, date = {2024-05-17}, journal = {Journal of Physical Chemistry C}, volume = {128}, number = {21}, pages = {8741–8749}, abstract = {Creating sub- to few-nanometer defects and nanopores in hexagonal boron nitride (hBN) opens opportunities for engineering quantum emitters and for nanofluidic and sensing applications. Using the electron beam in the aberration-corrected scanning transmission electron microscope, we demonstrate modification, thinning, and drilling of features in few-layer hBN membranes (∼5 to 20 nm-thick). The atomic composition is monitored with electron energy loss spectroscopy, which also facilitates drift correction. We report effects of electron beam energy and exposure times on defect size and structure. While previous studies focused on beam energies of ≤80 keV to avoid material damage, we show that drilling is favorable at a higher beam energy of 200 keV. The drilling rate at 200 keV is about 10 times larger than at 80 keV (∼1.2 vs 0.1 nm/min), and smaller pores are achievable with minimized damage to the surrounding material. Thinned hBN nanoscale features demonstrate enhanced emission via photoluminescence spectroscopy.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Creating sub- to few-nanometer defects and nanopores in hexagonal boron nitride (hBN) opens opportunities for engineering quantum emitters and for nanofluidic and sensing applications. Using the electron beam in the aberration-corrected scanning transmission electron microscope, we demonstrate modification, thinning, and drilling of features in few-layer hBN membranes (∼5 to 20 nm-thick). The atomic composition is monitored with electron energy loss spectroscopy, which also facilitates drift correction. We report effects of electron beam energy and exposure times on defect size and structure. While previous studies focused on beam energies of ≤80 keV to avoid material damage, we show that drilling is favorable at a higher beam energy of 200 keV. The drilling rate at 200 keV is about 10 times larger than at 80 keV (∼1.2 vs 0.1 nm/min), and smaller pores are achievable with minimized damage to the surrounding material. Thinned hBN nanoscale features demonstrate enhanced emission via photoluminescence spectroscopy. | |
Patel, Raj N; Fishman, Rebecca E K; Huang, Tzu-Yung; Gusdorff, Jordan A; Fehr, David A; Hopper, David A; Breitweiser, Alex S; Porat, Benjamin; Flatté, Michael E; Bassett, Lee C Dynamical Characterization and Room-Temperature Control of an Optically Addressable Single Spin in Hexagonal Boron Nitride Journal Article Forthcoming Forthcoming. @article{Patel2023, title = {Dynamical Characterization and Room-Temperature Control of an Optically Addressable Single Spin in Hexagonal Boron Nitride}, author = {Raj N. Patel and Rebecca E. K. Fishman and Tzu-Yung Huang and Jordan A. Gusdorff and David A. Fehr and David A. Hopper and S. Alex Breitweiser and Benjamin Porat and Michael E. Flatté and Lee C. Bassett}, url = {https://arxiv.org/abs/2309.05604}, year = {2023}, date = {2023-09-14}, abstract = {Hexagonal boron nitride (h-BN), a wide bandgap, two-dimensional solid-state material, hosts pure single-photon emitters that have shown signatures of optically-addressable electronic spins. Here, we report on a single emitter in h-BN exhibiting optically detected magnetic resonance at room temperature, and we propose a model for its electronic structure and optical dynamics. Using photon emission correlation spectroscopy in conjunction with time-domain optical and microwave experiments, we establish key features of the emitter's electronic structure. Specifically, we propose a model that includes a spinless optical ground and excited state, a metastable spin-1/2 configuration, and an emission modulation mechanism. Using optical and spin dynamics simulations, we constrain and quantify transition rates in the model, and we design protocols that optimize the signal-to-noise ratio for spin readout. This constitutes a necessary step toward quantum control of spin states in h-BN.}, keywords = {}, pubstate = {forthcoming}, tppubtype = {article} } Hexagonal boron nitride (h-BN), a wide bandgap, two-dimensional solid-state material, hosts pure single-photon emitters that have shown signatures of optically-addressable electronic spins. Here, we report on a single emitter in h-BN exhibiting optically detected magnetic resonance at room temperature, and we propose a model for its electronic structure and optical dynamics. Using photon emission correlation spectroscopy in conjunction with time-domain optical and microwave experiments, we establish key features of the emitter's electronic structure. Specifically, we propose a model that includes a spinless optical ground and excited state, a metastable spin-1/2 configuration, and an emission modulation mechanism. Using optical and spin dynamics simulations, we constrain and quantify transition rates in the model, and we design protocols that optimize the signal-to-noise ratio for spin readout. This constitutes a necessary step toward quantum control of spin states in h-BN. | |
Patel, Raj N; Hopper, David A; Gusdorff, Jordan A; Turiansky, Mark E; Huang, Tzu-Yung; Fishman, Rebecca E K; Porat, Benjamin; de Walle, Chris Van G; Bassett, Lee C Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride Journal Article PRX Quantum, 3 (3), pp. 030331, 2022. @article{Patel2022, title = {Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride}, author = {Raj N. Patel and David A. Hopper and Jordan A. Gusdorff and Mark E. Turiansky and Tzu-Yung Huang and Rebecca E. K. Fishman and Benjamin Porat and Chris G. Van de Walle and Lee C. Bassett}, url = {https://journals.aps.org/prxquantum/abstract/10.1103/PRXQuantum.3.030331}, doi = {10.1103/PRXQuantum.3.030331}, year = {2022}, date = {2022-09-01}, journal = {PRX Quantum}, volume = {3}, number = {3}, pages = {030331}, abstract = {Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters’ electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation spectroscopy. Several quantum emitters exhibit ideal single-photon emission with noise-limited photon antibunching, g(2)(0)=0. The photoluminescence emission lineshapes are consistent with individual vibronic transitions. However, polarization-resolved excitation and emission suggests the role of multiple optical transitions, and photon emission correlation spectroscopy reveals complicated optical dynamics associated with excitation and relaxation through multiple electronic excited states. We compare the experimental results to quantitative optical dynamics simulations, develop electronic structure models that are consistent with the observations, and discuss the results in the context of ab initio theoretical calculations.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Hexagonal boron nitride is a van der Waals material that hosts visible-wavelength quantum emitters at room temperature. However, experimental identification of the quantum emitters’ electronic structure is lacking, and key details of their charge and spin properties remain unknown. Here, we probe the optical dynamics of quantum emitters in hexagonal boron nitride using photon emission correlation spectroscopy. Several quantum emitters exhibit ideal single-photon emission with noise-limited photon antibunching, g(2)(0)=0. The photoluminescence emission lineshapes are consistent with individual vibronic transitions. However, polarization-resolved excitation and emission suggests the role of multiple optical transitions, and photon emission correlation spectroscopy reveals complicated optical dynamics associated with excitation and relaxation through multiple electronic excited states. We compare the experimental results to quantitative optical dynamics simulations, develop electronic structure models that are consistent with the observations, and discuss the results in the context of ab initio theoretical calculations. |