 | Omirzakhov, Kaisarbek; Idjadi, Mohamad Hossein; Huang, Tzu-Yung; Breitweiser, Alex S; Hopper, David A; Bassett, Lee C; Aflatouni, Firooz An Integrated Reconfigurable Spin Control System on 180 nm CMOS for Diamond NV Centers Journal Article IEEE Transactions on Microwave Theory and Techniques, pp. 1-12, 2023. Abstract | Links | BibTeX @article{Omirzakhov2023,
title = {An Integrated Reconfigurable Spin Control System on 180 nm CMOS for Diamond NV Centers},
author = {Kaisarbek Omirzakhov and Mohamad Hossein Idjadi and Tzu-Yung Huang and S. Alex Breitweiser and David A. Hopper and Lee C. Bassett and Firooz Aflatouni},
url = {https://ieeexplore.ieee.org/document/10079193/keywords#keywords},
doi = {10.1109/TMTT.2023.3254600},
year = {2023},
date = {2023-03-23},
journal = {IEEE Transactions on Microwave Theory and Techniques},
pages = {1-12},
abstract = {Solid-state electron spins are key building blocks for emerging applications in quantum information science, including quantum computers, quantum communication links, and quantum sensors. These solid-state spins are mainly controlled using complex microwave pulse sequences, which are typically generated using benchtop electrical instruments. Integration of the required electronics will enable realization of a scalable low-power and compact optically addressable quantum system. Here, we report an integrated reconfigurable quantum control system, which is used to find electron-spin resonance (ESR) frequency and perform Rabi, Ramsey, and Hahn-echo measurements for a nitrogen-vacancy (NV) center spin qubit in diamond. The chip can be programmed to synthesize an RF signal tunable from 1.6 to 2.6 GHz, which is modulated with a sequence of up to 4098 reconfigurable pulses with a pulse width and pulse-to-pulse delay adjustable from 10 ns to 42 ms and 18 ns to 42 ms, respectively, at a resolution of 2.5 ns. The 180-nm CMOS chip is fabricated within a footprint of 3.02 mm 2 and has a power consumption of 80 mW.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Solid-state electron spins are key building blocks for emerging applications in quantum information science, including quantum computers, quantum communication links, and quantum sensors. These solid-state spins are mainly controlled using complex microwave pulse sequences, which are typically generated using benchtop electrical instruments. Integration of the required electronics will enable realization of a scalable low-power and compact optically addressable quantum system. Here, we report an integrated reconfigurable quantum control system, which is used to find electron-spin resonance (ESR) frequency and perform Rabi, Ramsey, and Hahn-echo measurements for a nitrogen-vacancy (NV) center spin qubit in diamond. The chip can be programmed to synthesize an RF signal tunable from 1.6 to 2.6 GHz, which is modulated with a sequence of up to 4098 reconfigurable pulses with a pulse width and pulse-to-pulse delay adjustable from 10 ns to 42 ms and 18 ns to 42 ms, respectively, at a resolution of 2.5 ns. The 180-nm CMOS chip is fabricated within a footprint of 3.02 mm 2 and has a power consumption of 80 mW. |
 | Breitweiser, S A; Exarhos, A L; Patel, R N; Saouaf, J; Porat, B; Hopper, D A; Bassett, L C Efficient optical quantification of heterogeneous emitter ensembles Journal Article ACS Photonics, 7 , pp. 288-295, 2019. Abstract | Links | BibTeX @article{Breitweiser2019,
title = {Efficient optical quantification of heterogeneous emitter ensembles},
author = {S A Breitweiser and A L Exarhos and R N Patel and J Saouaf and B Porat and D A Hopper and L C Bassett},
url = {https://arxiv.org/abs/1909.12726
https://pubs.acs.org/doi/10.1021/acsphotonics.9b01707},
year = {2019},
date = {2019-12-17},
journal = {ACS Photonics},
volume = {7},
pages = {288-295},
abstract = {Defect-based quantum emitters in solid state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. In some materials, however, optical properties vary widely between emitters, even within the same sample. In these cases, traditional ensemble fluorescence measurements are confounded by heterogeneity, whereas individual defect-by-defect studies are impractical. Here, we develop a method to quantitatively and systematically analyze the properties of heterogeneous emitter ensembles using large-area photoluminescence maps. We apply this method to study the effects of sample treatments on emitters in hexagonal boron nitride, and we find that low-energy (3 keV) electron irradiation creates emitters, whereas high-temperature (850 ∘C) annealing in an inert gas environment brightens emitters.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Defect-based quantum emitters in solid state materials offer a promising platform for quantum communication and sensing. Confocal fluorescence microscopy techniques have revealed quantum emitters in a multitude of host materials. In some materials, however, optical properties vary widely between emitters, even within the same sample. In these cases, traditional ensemble fluorescence measurements are confounded by heterogeneity, whereas individual defect-by-defect studies are impractical. Here, we develop a method to quantitatively and systematically analyze the properties of heterogeneous emitter ensembles using large-area photoluminescence maps. We apply this method to study the effects of sample treatments on emitters in hexagonal boron nitride, and we find that low-energy (3 keV) electron irradiation creates emitters, whereas high-temperature (850 ∘C) annealing in an inert gas environment brightens emitters. |